SYSTEMS AND METHODS FOR SELECTIVELY MODIFYING GATING RATE IN SINGLE PHOTON AVALANCHE DIODES
A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable phot...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
28.08.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable photon detection over a frame capture time period. The first plurality of gate operations is performed at a first gating rate such that the first plurality of gate operations comprises a first quantity of gate operations performed over the frame capture time period. The system is further configurable to define a second gating rate based on the first frame metadata and capture a second image frame by performing a second plurality of gate operations to configure the SPAD array to enable photon detection at the second gating rate. |
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Bibliography: | Application Number: EP20220764931 |