LED DEVICE FORMATION USING RELEASABLE INORGANIC WAFER BOND

Methods of manufacturing a light emitting diode (LED) comprising bonding a transparent support wafer to a growth wafer are described. The transparent support wafer has a laser lift-off (LLO) release layer and inorganic bonding layer. The growth wafer has a matching inorganic bonding layer which is b...

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Bibliographic Details
Main Author Epler, John Edward
Format Patent
LanguageEnglish
French
German
Published 21.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of manufacturing a light emitting diode (LED) comprising bonding a transparent support wafer to a growth wafer are described. The transparent support wafer has a laser lift-off (LLO) release layer and inorganic bonding layer. The growth wafer has a matching inorganic bonding layer which is bonded to the inorganic bonding layer of the transparent support wafer. After processing, the LLO release layer is removed, separating the transparent support wafer and device wafer, and making the transparent support wafer available for reuse.
Bibliography:Application Number: EP20240157873