SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SINGLE-CRYSTAL SILICON CARBIDE PRODUCTION METHOD

A single-crystal silicon carbide wafer (31) of the present invention includes boron at a concentration of 1.0 × 1016 atoms/cm3 or less, and has a central region (33) whose basal plane dislocation density is 100/cm2 or less on the surface. The central region (33) includes the center of the surface of...

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Bibliographic Details
Main Authors KUMAGAI, Kazuto, KONO, Gaku, UMEZAKI, Tomonori
Format Patent
LanguageEnglish
French
German
Published 07.08.2024
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A single-crystal silicon carbide wafer (31) of the present invention includes boron at a concentration of 1.0 × 1016 atoms/cm3 or less, and has a central region (33) whose basal plane dislocation density is 100/cm2 or less on the surface. The central region (33) includes the center of the surface of the single-crystal silicon carbide wafer (31). An area of the central region (33) is one fourth or more of an area of the surface of the single-crystal silicon carbide wafer (31).
Bibliography:Application Number: EP20220876130