INTEGRATED CIRCUIT WITH BACKSIDE POWER RAILS

Integrated chips and methods of forming the same include forming a stack of layers, including a device stack above a first sacrificial layer, above a substrate. The first sacrificial layer is replaced with a first etch stop layer. The substrate is removed, exposing a substrate-side of the stack of l...

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Bibliographic Details
Main Authors XIE, Ruilong, REZNICEK, Alexander, SIEG, Stuart, GHOSH, Somnath, KRISHNAN, Rishikesh, CHOI, Kisik
Format Patent
LanguageEnglish
French
German
Published 07.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Integrated chips and methods of forming the same include forming a stack of layers, including a device stack above a first sacrificial layer, above a substrate. The first sacrificial layer is replaced with a first etch stop layer. The substrate is removed, exposing a substrate-side of the stack of layers. The substrate-side of the stack of layers is etched to form a trench, stopping on the first etch stop layer. A conductive line is formed in the trench.
Bibliography:Application Number: EP20220793730