DATA STORAGE CELL, MEMORY, AND MEMORY THEREOF

The invention discloses a data storage cell, comprising a storage structure, wherein a first end of the storage structure is electrically connected to a bit line; a first transistor, comprising a first gate, a first drain, and a first source; and a second transistor, comprising a second gate, a seco...

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Bibliographic Details
Main Authors HSUEH, Sheng-Yuan, LEE, Kuo-Hsing
Format Patent
LanguageEnglish
French
German
Published 10.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a data storage cell, comprising a storage structure, wherein a first end of the storage structure is electrically connected to a bit line; a first transistor, comprising a first gate, a first drain, and a first source; and a second transistor, comprising a second gate, a second drain, and a second source, wherein the first gate is electrically connected to the second gate, a second end of the storage structure is electrically connected to the first drain and the second drain, and the first source and the second source are electrically connected to a source line.
Bibliography:Application Number: EP20240175461