DATA STORAGE CELL, MEMORY, AND MEMORY THEREOF
The invention discloses a data storage cell, comprising a storage structure, wherein a first end of the storage structure is electrically connected to a bit line; a first transistor, comprising a first gate, a first drain, and a first source; and a second transistor, comprising a second gate, a seco...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
10.07.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a data storage cell, comprising a storage structure, wherein a first end of the storage structure is electrically connected to a bit line; a first transistor, comprising a first gate, a first drain, and a first source; and a second transistor, comprising a second gate, a second drain, and a second source, wherein the first gate is electrically connected to the second gate, a second end of the storage structure is electrically connected to the first drain and the second drain, and the first source and the second source are electrically connected to a source line. |
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Bibliography: | Application Number: EP20240175461 |