DIODES INCLUDING MULTIPLE SCHOTTKY CONTACTS

In some aspects, a diode can include: a substrate and semiconductor layer of a first conductivity type, the semiconductor layer being disposed on the substrate and including a drift region; a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region...

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Bibliographic Details
Main Author BOLOTNIKOV, Alexander Viktorovich
Format Patent
LanguageEnglish
French
German
Published 10.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In some aspects, a diode can include: a substrate and semiconductor layer of a first conductivity type, the semiconductor layer being disposed on the substrate and including a drift region; a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region; a first Schottky material disposed on at least a portion of the shield region and on a first portion of the drift region, the first Schottky material defining a first Schottky contact with an upper portion of the drift region; and a second Schottky material disposed on a second portion of the drift region, the second Schottky material being adjacent to the first Schottky material, the second Schottky material defining a second Schottky contact with the upper portion of the drift region, the first Schottky contact having a barrier height that is less than a barrier height of the second Schottky contact.
Bibliography:Application Number: EP20230727782