RESISTIVE MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE RESISTIVE MEMORY DEVICE

• Main Authors: KANG, Jooheon, AHN, Dongho, Yumin, KIM, HYUN, Seungdam, PARK, Garam, SONG, Hyunjae, WOO, Myunghun, KIM, Seyun, YANG, Seungyeul, LEE, Jinwoo
• Format: Patent
• Language: English; French; German
• Published: 03.07.2024
• Subjects: ELECTRICITY

Disclosed is a resistive memory device (CS) including a vertical stack of memory cells (MC), each memory cell comprising a gate electrode (140), a resistance change layer (124), a (semiconductor transistor) channel (132) between the gate electrode and the resistance change layer, an island structure...