INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING THE SAME
Integrated circuit devices (100) may include a substrate (102) including a word line trench (WT) extending longitudinally in a first horizontal direction (X), a gate dielectric film (120) extending along an inner surface of the word line trench, a word line (WL) in a lower portion of the word line t...
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
26.06.2024
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Subjects | |
Online Access | Get full text |
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