INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING THE SAME

• Main Authors: LEE, Hyunjung, LEE, Junbum, LEE, Jinseong, KIM, Junsoo, KONG, Dongsik
• Format: Patent
• Language: English; French; German
• Published: 26.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Integrated circuit devices (100) may include a substrate (102) including a word line trench (WT) extending longitudinally in a first horizontal direction (X), a gate dielectric film (120) extending along an inner surface of the word line trench, a word line (WL) in a lower portion of the word line t...