INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING THE SAME

Integrated circuit devices (100) may include a substrate (102) including a word line trench (WT) extending longitudinally in a first horizontal direction (X), a gate dielectric film (120) extending along an inner surface of the word line trench, a word line (WL) in a lower portion of the word line t...

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Bibliographic Details
Main Authors LEE, Hyunjung, LEE, Junbum, LEE, Jinseong, KIM, Junsoo, KONG, Dongsik
Format Patent
LanguageEnglish
French
German
Published 26.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Integrated circuit devices (100) may include a substrate (102) including a word line trench (WT) extending longitudinally in a first horizontal direction (X), a gate dielectric film (120) extending along an inner surface of the word line trench, a word line (WL) in a lower portion of the word line trench on the gate dielectric film and extending longitudinally in the first horizontal direction, and an insulating capping pattern (128) in an upper portion of the word line trench on the word line and extending longitudinally in the first horizontal direction. The word line may include a work-function control conductive plug (122B) including a conductive metal nitride that include a metal dopant, and the work-function control conductive plug includes a top surface in contact with a bottom surface of the insulating capping pattern, a sidewall in contact with the gate dielectric film, and a bottom surface in contact with a monolithic layer (122A).
Bibliography:Application Number: EP20230211502