POST-DRY ETCHING PHOTORESIST AND METAL CONTAINING RESIDUE REMOVAL FORMULATION

The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.

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Bibliographic Details
Main Authors CHANG, Chung-Yi, WU, Aiping, LEE, Yi-Chia, LIU, Wen Dar, GE, Jhih-Kuei
Format Patent
LanguageEnglish
French
German
Published 26.06.2024
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Summary:The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.
Bibliography:Application Number: EP20220797205