POST-DRY ETCHING PHOTORESIST AND METAL CONTAINING RESIDUE REMOVAL FORMULATION
The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
26.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition. |
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Bibliography: | Application Number: EP20220797205 |