SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRYSTALLINE REGION AND METHOD THEREFOR

A semiconductor device includes a semiconductor substrate, a collector region having a first width formed within the semiconductor substrate and an intrinsic base region having a second width, disposed over the collector region, wherein the first width is greater than the second width. An extrinsic...

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Main Authors Radic, Ljubo, John, Jay Paul, Donkers, Johannes Josephus Theodorus Marinus, Kirchgessner, James Albert
Format Patent
LanguageEnglish
French
German
Published 19.06.2024
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Abstract A semiconductor device includes a semiconductor substrate, a collector region having a first width formed within the semiconductor substrate and an intrinsic base region having a second width, disposed over the collector region, wherein the first width is greater than the second width. An extrinsic base region having an upper surface is formed over the collector region and electrically coupled to the intrinsic base region, wherein the extrinsic base region includes a monocrystalline region coupled to the intrinsic base region and a polycrystalline region coupled to the monocrystalline region. An emitter region is formed over the base region.
AbstractList A semiconductor device includes a semiconductor substrate, a collector region having a first width formed within the semiconductor substrate and an intrinsic base region having a second width, disposed over the collector region, wherein the first width is greater than the second width. An extrinsic base region having an upper surface is formed over the collector region and electrically coupled to the intrinsic base region, wherein the extrinsic base region includes a monocrystalline region coupled to the intrinsic base region and a polycrystalline region coupled to the monocrystalline region. An emitter region is formed over the base region.
Author Kirchgessner, James Albert
Donkers, Johannes Josephus Theodorus Marinus
Radic, Ljubo
John, Jay Paul
Author_xml – fullname: Radic, Ljubo
– fullname: John, Jay Paul
– fullname: Donkers, Johannes Josephus Theodorus Marinus
– fullname: Kirchgessner, James Albert
BookMark eNqNyr0OgjAUQOEOOvj3DvcFHAxoWGt7oTeBW9NW1IkQUyZTSPD942Kcnc7wnbVYpDHFlRg8NqQs66sK1oHGlhSCkS1xBZIB78ERe1Jwlh7BYUWW4UbBgITGslXu4YOsa-KfStbQYDBWQzDosLRuK5ZD_5rj7tuNgBKDMvs4jV2cp_4ZU3x3eMmz4lQcc3nI_lg-rGg2iQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate DISPOSITIF SEMI-CONDUCTEUR AYANT UNE RÉGION DE BASE EXTRINSÈQUE DOTÉE D'UNE RÉGION MONOCRISTALLINE ET PROCÉDÉ ASSOCIÉ
HALBLEITERANORDNUNG MIT EINER EXTRINSISCHEN BASISREGION MIT EINER MONOKRISTALLINEN REGION UND VERFAHREN DAFÜR
ExternalDocumentID EP4386854A1
GroupedDBID EVB
ID FETCH-epo_espacenet_EP4386854A13
IEDL.DBID EVB
IngestDate Fri Sep 20 10:11:54 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_EP4386854A13
Notes Application Number: EP20230216225
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240619&DB=EPODOC&CC=EP&NR=4386854A1
ParticipantIDs epo_espacenet_EP4386854A1
PublicationCentury 2000
PublicationDate 20240619
PublicationDateYYYYMMDD 2024-06-19
PublicationDate_xml – month: 06
  year: 2024
  text: 20240619
  day: 19
PublicationDecade 2020
PublicationYear 2024
RelatedCompanies NXP B.V
RelatedCompanies_xml – name: NXP B.V
Score 3.5445476
Snippet A semiconductor device includes a semiconductor substrate, a collector region having a first width formed within the semiconductor substrate and an intrinsic...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRYSTALLINE REGION AND METHOD THEREFOR
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240619&DB=EPODOC&locale=&CC=EP&NR=4386854A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT8IwFG8IGvWmqBG_0oPZjahZge5ATGkLmwkdGQXxRFbpEi6DwIz_vq8LoBe9vbTJS_uS9_Fr3wdCDybLTEp8v2GonTeITQM3yB3ACnH9zjJLSeAKnAeqFY7J67Q5raDFrham7BP6VTZHBI36AH0vSnu9-nnEEmVu5ebRLGBp-dLTHeFt0XHpngJPdDtyGIuYe5wD5amkQ3zaok3CACgdQBTddsogJ11XlLL67VF6p-hwCMzy4gxVbF5Dx3w3eK2Gjgbb_24gt6q3OUfZyEksVmLMdZxgIScRlzhkk0j1MVNYTnUCSDziuMtGEieyD1YSv0U6xAyD4Yx58j7SDLC72u8yJfBA6jAWWIcykYAILxDuSc3DBhx4thfOTA73V_MvUTVf5vYKYTtPadq0QfZkwP24MpCAEpoaQ6yFCKtdR_U_2Vz_s3eDTpyUXa7Uc3CLqsX6096BVy7MfSnPb1goiZ8
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8QNOqbokb87IPZG1GzAtsDMaMtbOo2MgriE1mlS3gZRGb8970ugL7o26VNLtdL7uPX9u4AblWWqZTadkM5etagOnXNIHcEK9T0O8u0Q11T4BxGLX9EnybNSQXmm1qYsk_oV9kcES3qHe29KP318ucSi5d_K1d3ao5Li8ee7HBrjY7L8ORavNsRg5jHzGIMKStKOtR2Wk6TegiUdjDDbhtjEOOuKUpZ_o4ovUPYHSCzvDiCis5rsM82g9dqsBeu37uRXJve6hiyodFYHPERk3FCuBgHTBDfGwdRn3gREROZIBIPGOl6Q0ES0UcvSV4D6ROPoOOMWfI2lB5i92i760WchEL6MSfSF4lARHgCpCck8xso8HSrnKkYbI9mn0I1X-T6DIiepU7a1G52rzD8mDIQ16FOqhTVGjOsdh3qf7I5_2fvBvZ9Gb5MUdbnCzgwGjf_ph7cS6gWH5_6CiN0oa5L3X4D-PSMkg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE+HAVING+AN+EXTRINSIC+BASE+REGION+WITH+A+MONOCRYSTALLINE+REGION+AND+METHOD+THEREFOR&rft.inventor=Radic%2C+Ljubo&rft.inventor=John%2C+Jay+Paul&rft.inventor=Donkers%2C+Johannes+Josephus+Theodorus+Marinus&rft.inventor=Kirchgessner%2C+James+Albert&rft.date=2024-06-19&rft.externalDBID=A1&rft.externalDocID=EP4386854A1