SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRYSTALLINE REGION AND METHOD THEREFOR

A semiconductor device includes a semiconductor substrate, a collector region having a first width formed within the semiconductor substrate and an intrinsic base region having a second width, disposed over the collector region, wherein the first width is greater than the second width. An extrinsic...

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Bibliographic Details
Main Authors Radic, Ljubo, John, Jay Paul, Donkers, Johannes Josephus Theodorus Marinus, Kirchgessner, James Albert
Format Patent
LanguageEnglish
French
German
Published 19.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate, a collector region having a first width formed within the semiconductor substrate and an intrinsic base region having a second width, disposed over the collector region, wherein the first width is greater than the second width. An extrinsic base region having an upper surface is formed over the collector region and electrically coupled to the intrinsic base region, wherein the extrinsic base region includes a monocrystalline region coupled to the intrinsic base region and a polycrystalline region coupled to the monocrystalline region. An emitter region is formed over the base region.
Bibliography:Application Number: EP20230216225