ONE-TIME PROGRAMMABLE MEMORY CIRCUIT, ONE-TIME PROGRAMMABLE MEMORY AND OPERATION METHOD THEREOF

The present disclosure provides a one-time programmable memory, which includes a one-time programmable (OTP) diode and a control field effect transistor (FET). One end of the OTP diode is electrically connected to a source line. The control FET includes a gate, a first source/drain and a second sour...

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Bibliographic Details
Main Author HSIEH, E Ray
Format Patent
LanguageEnglish
French
German
Published 19.06.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The present disclosure provides a one-time programmable memory, which includes a one-time programmable (OTP) diode and a control field effect transistor (FET). One end of the OTP diode is electrically connected to a source line. The control FET includes a gate, a first source/drain and a second source/drain, the gate of the control FET is electrically connected to a word line, the first source/drain of the control FET is electrically connected to a bit line, and the second source/drain of the control FET is electrically connected to another of the OTP diode.
Bibliography:Application Number: EP20230217046