METHOD FOR STABILIZING COPPER-RICH SILICIDE PHASES, AND USE OF SAID COPPER-RICH SILICIDE PHASES IN A LITHIUM-ION BATTERY
The invention relates to a method for stabilizing copper-rich silicide phases, in which method a silicon layer structure is applied to a carrier substrate. The problem addressed by the present invention of, in particular, specifying a method by means of which the properties of phase separation and m...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
19.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a method for stabilizing copper-rich silicide phases, in which method a silicon layer structure is applied to a carrier substrate. The problem addressed by the present invention of, in particular, specifying a method by means of which the properties of phase separation and microstructure formation can be varied in a controlled way, while at the same time the process should be able to be carried out as simply, quickly and efficiently as possible, is solved by means of a method for stabilizing copper-rich silicide phases, in which method a silicon layer structure is applied to a carrier substrate, a layer of the silicon layer structure being applied from a mixture of at least one metal and silicon, which mixture is subsequently subjected to short-term tempering, wherein, by the setting of process parameters, such as a pulse duration in the range of 0.01 to 100 ms and/or a pulse energy amount in the range of 0.1 to 100 J/cm² in the short-term tempering and preheating or cooling of the carrier substrate to a range of 4°C to 200°C and a material selection of the applied mixture of the layer of the silicon layer structure, phase separation of the applied layer is controlled. |
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Bibliography: | Application Number: EP20220765423 |