SYSTEMS AND METHODS FOR PRODUCING SILICON CARBIDE POWDER
Methods and systems are provided for producing silicon carbide. The system comprises an enclosure configured to be maintained under vacuum conditions and at a processing temperature above a melting temperature of silicon, a vapor production system configured to supply a silicon vapor to the enclosur...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
05.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Methods and systems are provided for producing silicon carbide. The system comprises an enclosure configured to be maintained under vacuum conditions and at a processing temperature above a melting temperature of silicon, a vapor production system configured to supply a silicon vapor to the enclosure, and a transportation system configured to provide a stream of graphite powder into the enclosure, retain the graphite powder within the enclosure for a processing time sufficient to react the graphite powder with the silicon vapor to produce a silicon carbide powder, and then provide a stream of the silicon carbide powder out of the enclosure. |
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Bibliography: | Application Number: EP20230203472 |