SYSTEMS AND METHODS FOR PRODUCING SILICON CARBIDE POWDER

Methods and systems are provided for producing silicon carbide. The system comprises an enclosure configured to be maintained under vacuum conditions and at a processing temperature above a melting temperature of silicon, a vapor production system configured to supply a silicon vapor to the enclosur...

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Bibliographic Details
Main Authors MEHR, Mehrad, JADIDIAN, Bahram
Format Patent
LanguageEnglish
French
German
Published 05.06.2024
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:Methods and systems are provided for producing silicon carbide. The system comprises an enclosure configured to be maintained under vacuum conditions and at a processing temperature above a melting temperature of silicon, a vapor production system configured to supply a silicon vapor to the enclosure, and a transportation system configured to provide a stream of graphite powder into the enclosure, retain the graphite powder within the enclosure for a processing time sufficient to react the graphite powder with the silicon vapor to produce a silicon carbide powder, and then provide a stream of the silicon carbide powder out of the enclosure.
Bibliography:Application Number: EP20230203472