MULTI-TIME PROGRAMMABLE MEMORY CELL AND METHOD THEREFOR

A multi-time programmable memory cell is provided. The multi-time programmable memory cell includes a floating gate formed on a field oxide region formed on a semiconductor substrate. A control gate is formed on the field oxide region and located parallel to a first portion of the floating gate. A p...

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Bibliographic Details
Main Authors van Duuren, Michiel Jos, Boter, Johan Dick, Dubois, Jerome Guillaume Anna
Format Patent
LanguageEnglish
French
German
Published 15.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A multi-time programmable memory cell is provided. The multi-time programmable memory cell includes a floating gate formed on a field oxide region formed on a semiconductor substrate. A control gate is formed on the field oxide region and located parallel to a first portion of the floating gate. A program-erase electrode is formed on the field oxide region and proximate to a second portion of the floating gate. A first well region and a second well region are formed in the semiconductor substrate such that a channel region is formed between the first well region and the second well region with a third portion of the floating gate overlaying the channel region.
Bibliography:Application Number: EP20230207667