MULTI-TIME PROGRAMMABLE MEMORY CELL AND METHOD THEREFOR
A multi-time programmable memory cell is provided. The multi-time programmable memory cell includes a floating gate formed on a field oxide region formed on a semiconductor substrate. A control gate is formed on the field oxide region and located parallel to a first portion of the floating gate. A p...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
15.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A multi-time programmable memory cell is provided. The multi-time programmable memory cell includes a floating gate formed on a field oxide region formed on a semiconductor substrate. A control gate is formed on the field oxide region and located parallel to a first portion of the floating gate. A program-erase electrode is formed on the field oxide region and proximate to a second portion of the floating gate. A first well region and a second well region are formed in the semiconductor substrate such that a channel region is formed between the first well region and the second well region with a third portion of the floating gate overlaying the channel region. |
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Bibliography: | Application Number: EP20230207667 |