SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES

Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side...

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Bibliographic Details
Main Authors BRDAR, Robert Daniel, BULUCEA, Constantin, MOJAB, Alireza, BU, Jiankang, KNAPP, Jeffrey
Format Patent
LanguageEnglish
French
German
Published 24.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.
Bibliography:Application Number: EP20220856538