MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS

Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material st...

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Bibliographic Details
Main Authors FANTINI, Paolo, FRATIN, Lorenzo, GRAETTINGER, Thomas M, FLYNN, Patrick, M, VARESI, Enrico
Format Patent
LanguageEnglish
French
German
Published 11.09.2024
Subjects
ELECTRICITY
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Summary:Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.
Bibliography:Application Number: EP20220812358