USE OF QUARTZ PLATES DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTS

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on...

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Bibliographic Details
Main Authors TOSI, Paolo, PANNOCCHIA, Matteo, MARCHESE, Francesca
Format Patent
LanguageEnglish
French
German
Published 17.04.2024
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.
Bibliography:Application Number: EP20220733347