METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE COMPRISING A USEFUL LAYER MADE OF SILICON CARBIDE, WITH IMPROVED ELECTRICAL PROPERTIES

• Main Authors: ROUCHIER, Séverin, DROUIN, Alexis, WIDIEZ, Julie, ROLLAND, Emmanuel, GAUDIN, Gweltaz, SCHWARZENBACH, Walter
• Format: Patent
• Language: English; French; German
• Published: 10.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for producing a semiconductor structure comprises: a) provision of a monocrystalline silicon carbide donor substrate and a silicon carbide support substrate; b) production of a useful layer to be transferred, comprising-implanting light species in the donor substrate at a front face, so as...