METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE COMPRISING A USEFUL LAYER MADE OF SILICON CARBIDE, WITH IMPROVED ELECTRICAL PROPERTIES

• Main Authors: ROUCHIER, Séverin, DROUIN, Alexis, WIDIEZ, Julie, ROLLAND, Emmanuel, GAUDIN, Gweltaz, SCHWARZENBACH, Walter
• Format: Patent
• Language: English; French; German
• Published: 10.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for producing a semiconductor structure comprises: a) provision of a monocrystalline silicon carbide donor substrate and a silicon carbide support substrate; b) production of a useful layer to be transferred, comprising-implanting light species in the donor substrate at a front face, so as to form a damage profile, the profile having a main peak of deep-level defects defining a buried brittle plane and a secondary peak of defects defining a damaged surface layer, and-removing the damaged surface layer by chemical etching and/or chemical mechanical polishing of the front face of the donor substrate, so as to form a new front surface of the donor substrate; c) assembly of donor substrate with the support substrate; and d) separation along the buried fragile plane, leading to the transfer of the useful layer onto the support substrate, so as to form the semiconductor structure.