FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL

Techniques are provided herein to form semiconductor devices that include gate cuts with different widths (e.g., at least a 1.5x difference in width) but substantially the same height (e.g., less than 5 nm difference in height). A given gate structure extending over one or more semiconductor regions...

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Bibliographic Details
Main Authors BAYATI, Reza, DAVIS, Alison V, TAN, Jeffrey Miles, GHOSH, Swapnadip, PRINCE, Matthew J, YOUNGBLOOD, Bern
Format Patent
LanguageEnglish
French
German
Published 03.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Techniques are provided herein to form semiconductor devices that include gate cuts with different widths (e.g., at least a 1.5x difference in width) but substantially the same height (e.g., less than 5 nm difference in height). A given gate structure extending over one or more semiconductor regions may be interrupted with any number of gate cuts that each extend through an entire thickness of the gate structure. According to some embodiments, gate cuts of a similar first width are formed via a first etching process while gate cuts of a similar second width that is greater than the first width are formed via a second etching process that is different from the first etching process. Using different etch processes for gate cuts of different widths maintains a similar height for the gate cuts of different widths.
Bibliography:Application Number: EP20230191474