GATE CUT WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING

• Main Authors: Ghani, Tahir, Nabors, Marni, Guler, Leonard P, Yemenicioglu, Sukru, Wang, Xinning
• Format: Patent
• Language: English; French; German
• Published: 03.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit includes a first device (101c) and a laterally adjacent second device (101d). The first device includes a first body (104c) including semiconductor material extending from a first source region to a first drain region, and a first gate structure (125b) on the first body. The second device includes a second body (104d) including semiconductor material extending from a second source region to a second drain region, and a second gate structure (125c) on the second body. A gate cut (122b') including dielectric material (124) is between and laterally separates the first gate structure and the second gate structure. The first body is separated laterally from the gate cut by a first distance (d3'), and the second body is separated laterally from the gate cut by a second distance (d4'). The first and second distances differ by at least 2 nanometers. In an example, the first and second devices are fin-based devices or gate-all-around devices.