SILICON-CONTROLLED RECTIFIERS WITH A SEGMENTED FLOATING REGION

Structures for a silicon-controlled rectifier and methods of forming same. The structure comprises a first well, a second well, and a third well in a semiconductor substrate. The third well is positioned between the first well and the second well. A first terminal includes a first doped region in th...

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Bibliographic Details
Main Authors AJAY, JAIN, Ruchil Kumar, MAHAJAN, Prantik, ZAKA, Alban
Format Patent
LanguageEnglish
French
German
Published 20.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Structures for a silicon-controlled rectifier and methods of forming same. The structure comprises a first well, a second well, and a third well in a semiconductor substrate. The third well is positioned between the first well and the second well. A first terminal includes a first doped region in the first well, and a second terminal includes a second doped region in the second well. The first well, the second well, and the second doped region have a first conductivity type, and the third well and the first doped region have a second conductivity type opposite to the first conductivity type. The structure further comprises a third doped region in the third well. The third doped region includes a first segment and a second segment, and the first segment is separated from the second segment by a portion of the first well and a portion of the third well.
Bibliography:Application Number: EP20230186567