DIAGNOSIS AND PROGNOSIS OF IGBT MODULES

According to an aspect, there is provided an apparatus for performing the following. The apparatus maintains, in a memory, information on a computational model for thermal behavior of layers of an insulated-gate bipolar transistor, IGBT, module (501). The apparatus obtains measurements of the dissip...

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Bibliographic Details
Main Authors Bianda, Enea, Firla, Marcin, Vulli, Aleksi, Schlottig, Gerd, Orkisz, Michal
Format Patent
LanguageEnglish
French
German
Published 20.03.2024
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
MEASURING QUANTITY OF HEAT
MEASURING TEMPERATURE
PHYSICS
TESTING
THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Summary:According to an aspect, there is provided an apparatus for performing the following. The apparatus maintains, in a memory, information on a computational model for thermal behavior of layers of an insulated-gate bipolar transistor, IGBT, module (501). The apparatus obtains measurements of the dissipated power at the semiconductors and the ambient temperature and determines one or more current values of one or more temperatures of the IGBT module (501) based on a switching delay of the IGBT module (501). The apparatus calculates a current estimate of a joint state-parameter space of the computational model using a Bayesian filter and the computational model taking as inputs the dissipated power and the ambient temperature. The joint state-parameter space comprises the one or more temperatures, one or more thermal loss parameters and one or more wear parameters. The one or more current values of the one or more temperatures are used as observations in the Bayesian filter.
Bibliography:Application Number: EP20220195844