SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device 100, 100' comprises a main bi-directional switch 10 formed on a semiconductor substrate 2) and comprising first and second gates, a first source electrically connected to a first voltage terminal VS1, a second source electrically connected to a second vo...

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Bibliographic Details
Main Authors KIM, Hyeongnam, IMAM, Mohamed
Format Patent
LanguageEnglish
French
German
Published 06.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:In an embodiment, a semiconductor device 100, 100' comprises a main bi-directional switch 10 formed on a semiconductor substrate 2) and comprising first and second gates, a first source electrically connected to a first voltage terminal VS1, a second source electrically connected to a second voltage terminal VS2, and a common drain D and a substrate control circuit 11. The substrate control circuit (11) comprises a first diode SD1 and a second diode SD2, a discharge circuit 12 comprising a first transistor QC1 and a second transistor QC2 connected in a common source configuration to the semiconductor substrate 20, and a gate potential control circuit 13 comprising a third diode QD1 and a fourth diode QD2. The first diode SD1 has a forward voltage Vf1 and the third diode QD1 has a forward voltage Vf3, wherein Vf1 ≥ 1.1 Vf4 or Vf1 ≥ 1.2Vf4 or Vf1 ≥ 1.5Vf4 or Vf1 ≥ 2Vf4.
Bibliography:Application Number: EP20220193542