RADIO FREQUENCY FRONT END (RFFE) HETERO-INTEGRATION

In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap....

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Bibliographic Details
Main Authors DUTTA, Ranadeep, KIM, Jonghae, LAN, Je-Hsiung
Format Patent
LanguageEnglish
French
German
Published 06.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.
Bibliography:Application Number: EP20220722980