SEMICONDUCTOR APPARATUS AND FABRICATION METHOD THEREFOR

This application provides a semiconductor apparatus and a manufacturing method thereof. The semiconductor apparatus includes a first chip and a second chip, the first chip includes a first metal layer and a first bonding intermediate layer, and the second chip includes a second metal layer and a sec...

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Bibliographic Details
Main Authors HE, Ran, JIAO, Huifang
Format Patent
LanguageEnglish
French
German
Published 21.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This application provides a semiconductor apparatus and a manufacturing method thereof. The semiconductor apparatus includes a first chip and a second chip, the first chip includes a first metal layer and a first bonding intermediate layer, and the second chip includes a second metal layer and a second bonding intermediate layer. The first bonding intermediate layer is provided with an opening, and the first metal layer is exposed to a surface of the first bonding intermediate layer through the opening on the first bonding intermediate layer. The second bonding intermediate layer is provided with an opening, and the second metal layer is exposed to a surface of the second bonding intermediate layer through the opening on the second bonding intermediate layer. Materials of the first bonding intermediate layer and the second bonding intermediate layer each include a material that can form a dangling bond by removing an oxide layer on the surface. According to the semiconductor apparatus provided in this application, because the first metal layer can be directly bonded with the second metal layer through a low-temperature bonding process, electrical performance of the semiconductor apparatus is improved.
Bibliography:Application Number: EP20210937237