HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR AND APPLICATION THEREOF

• Main Authors: LI, Qian, ZHANG, Xinkun, YANG, Hui, ZHONG, Yaozong, LIU, Jianxun, ZHOU, Yu, ZHAN, Xiaoning, SUN, Qian
• Format: Patent
• Language: English; French; German
• Published: 21.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present application discloses a high-electron-mobility transistor structure as well as a fabricating method and use thereof. The high-electron-mobility transistor structure includes an epitaxial structure as well as a source electrode, a drain electrode and a gate electrode, wherein the epitaxial structure includes a first semiconductor layer and a second semiconductor layer, a carrier channel is formed between the first semiconductor layer and the second semiconductor layer, and the source electrode is electrically connected with the drain electrode through the carrier channel; a coincidence rate between the orthographic projection of the gate foot of the gate electrode on the first semiconductor layer and the orthographic projection of the second semiconductor layer on the first semiconductor layer is more than 80%.The GaN electronic device of the present application has no gate-source access regions and gate-drain access regions, and the entire carrier channel is effectively regulated by the gate electrode, and non-linear effect induced due to degeneration of a RGS resistor can be eliminated on the basis of realizing speed saturation and reducing a knee voltage of a device.