A WAFER FOR THE CVD GROWTH OF UNIFORM GRAPHENE AND METHOD OF MANUFACTURE THEREOF

• Main Authors: DIXON, Sebastian, KAINTH, Jaspreet, JAGT, Robert
• Format: Patent
• Language: English; French; German
• Published: 07.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700° C., the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.