8-SHAPED INDUCTOR WITH GROUND BAR STRUCTURE
A semiconductor device (1a) includes a substrate (100); a first terminal (A) and a second terminal (B); and a conductor (210) arranged on the substrate (100) between the first terminal (A) and the second terminal (B) to constitute an inductor (IN) shaped for forming a first loop (L1) and a second lo...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English French German |
Published |
31.01.2024
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A semiconductor device (1a) includes a substrate (100); a first terminal (A) and a second terminal (B); and a conductor (210) arranged on the substrate (100) between the first terminal (A) and the second terminal (B) to constitute an inductor (IN) shaped for forming a first loop (L1) and a second loop (L2) arranged side-by-side along a first direction (D1). A crossing (C) of the conductor (210) with itself is present between the first loop (L1) and the second loop (L2). The first loop (L1) and the second loop (L2) define a first enclosed area (A1) and a second enclosed area (A2), respectively. At least one ground bar (GB1, GB2) traverses either the first loop (L1) or the second loop (L2). |
---|---|
Bibliography: | Application Number: EP20230185523 |