SAME LEVEL MRAM STACKS HAVING DIFFERENT CONFIGURATIONS

A semiconductor device is provided. The semiconductor device includes a base layer, a first MRAM device formed on the base layer, and a second MRAM device formed on the base layer. The first MRAM device has a different performance characteristic than the second MRAM device.

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Bibliographic Details
Main Authors VAN DER STRATEN, Oscar, MIGNOT, Yann, HOUSSAMEDDINE, Dimitri
Format Patent
LanguageEnglish
French
German
Published 24.01.2024
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor device is provided. The semiconductor device includes a base layer, a first MRAM device formed on the base layer, and a second MRAM device formed on the base layer. The first MRAM device has a different performance characteristic than the second MRAM device.
Bibliography:Application Number: EP20220713581