FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND SWITCHING CIRCUIT

A field effect transistor includes a channel layer, a source, a drain, a gate structure, and a gate metal layer; and the gate structure includes a P-type gallium nitride layer and an N-type gallium nitride layer that are disposed in a stacking manner, so that a gate metal/pGaN Schottky diode is repl...

Full description

Saved in:
Bibliographic Details
Main Authors TANG, Gaofei, JIANG, Qimeng, CURATOLA, Gilberto, WANG, Hanxing, BAO, Qilong
Format Patent
LanguageEnglish
French
German
Published 03.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A field effect transistor includes a channel layer, a source, a drain, a gate structure, and a gate metal layer; and the gate structure includes a P-type gallium nitride layer and an N-type gallium nitride layer that are disposed in a stacking manner, so that a gate metal/pGaN Schottky diode is replaced with an nGaN/pGaN reverse bias diode, to improve a gate voltage-withstand capability of the field effect transistor, thereby improving a breakdown capability of the field effect transistor. A doping density of the P-type gallium nitride layer is between 1×1018 cm−3 and 1×1019 cm−3, so that a charge storage effect during operation of a device can be reduced, carriers at the pGaN layer can be exhausted as much as possible, and redundant-charge storage is avoided, thereby improving operating threshold voltage stability of the device.
Bibliography:Application Number: EP20220766220