IGBT MODULE, ELECTRIC MOTOR CONTROLLER, AND VEHICLE

An insulated gate bipolar transistor (IGBT) assembly includes a wafer; a first heat dissipation plate and a second heat dissipation plate being disposed on two surfaces of the wafer in a thickness direction of the wafer respectively, a plurality of first heat dissipation pins being disposed at an in...

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Bibliographic Details
Main Authors ZHANG, Xingchun, QI, Axi, YU, Fengchuan, YANG, Guangming, YU, Yilong
Format Patent
LanguageEnglish
French
German
Published 03.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An insulated gate bipolar transistor (IGBT) assembly includes a wafer; a first heat dissipation plate and a second heat dissipation plate being disposed on two surfaces of the wafer in a thickness direction of the wafer respectively, a plurality of first heat dissipation pins being disposed at an interval from each other on a surface of the first heat dissipation plate facing away from the second heat dissipation plate, and a plurality of second heat dissipation pins being disposed at an interval from each other on a surface of the second heat dissipation plate facing away from the first heat dissipation plate; and an insulating waterproof housing covering a portion of the wafer exposed from the first heat dissipation plate and the second heat dissipation plate.
Bibliography:Application Number: EP20220794306