METHOD FOR PRODUCING AT LEAST ONE CRACK-FREE SIC PIECE

• Main Authors: Ceran, Kagan, Schaaf, Friedrich
• Format: Patent
• Language: English; French; German
• Published: 22.11.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention refers to a method for producing at least one crack-free SiC piece at least comprising the steps:Providing a CVD reactor, wherein the CVD reactor comprises at least one SiC growth substrate, wherein the at least one SiC growth substrate comprises a main body, a first power connection and a second power connection, wherein the main body has a main body length, wherein the main body length extends between the first power connection and the second power connection, wherein the first power connection is configured to conduct power into the main body for heating the main body and wherein the second power connection is configured to conduct electric power conducted via the first power connection into the main body out of the main body, wherein the main body forms a physical structure, wherein the physical structure forms a deposition surface for deposition of SiC, Growing a SiC solid by depositing SiC on the physical structure in the CVD reactor, wherein the at least one crack-free SiC piece is part of the SiC solid, wherein the deposited SiC has a minimal thickness of at least 1cm, wherein the at least one SiC piece is formed between a first plane and a second plane, wherein the first plane is perpendicular to the main body length and wherein the second plane is perpendicular to the main body length, wherein the distance between the first plane and the second plane is at least 1% of the main body length, Removing the at least one crack-free SiC piece from the SiC solid, wherein the at least one crack-free SiC piece has a cross-sectional size of at least 4cm2 and a thickness of at least 0,1cm.