GALLIUM NITRIDE POWER TRANSISTOR

The disclosure relates to a Gallium Nitride power transistor, comprising: a buffer layer; and a barrier layer having a top side, a bottom side, the bottom side facing the buffer layer, the bottom side of the barrier layer is placed on the buffer layer; an interlayer interposed between a p-type doped...

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Bibliographic Details
Main Authors TANG, Gaofei, JIANG, Qimeng, CURATOLA, Gilberto, WANG, Hanxing, BAO, Qilong
Format Patent
LanguageEnglish
French
German
Published 08.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure relates to a Gallium Nitride power transistor, comprising: a buffer layer; and a barrier layer having a top side, a bottom side, the bottom side facing the buffer layer, the bottom side of the barrier layer is placed on the buffer layer; an interlayer interposed between a p-type doped Gallium Nitride layer and a metal gate layer, the interlayer is made of a III-V compound semiconductor comprising a combination of at least one group III element with at least one group V element, the p-type doped Gallium Nitride layer is placed on the top side of the barrier layer, the metal gate layer is electrically connected to the p-type doped Gallium Nitride layer via the interlayer to form a rectifying metal-semiconductor junction with the p-type doped Gallium Nitride layer.
Bibliography:Application Number: EP20210928586