MATERIAL COMPRISING A STACK WITH A THIN ZINC-BASED DIELECTRIC OXIDE UNDERLAYER AND METHOD FOR DEPOSITING SAID MATERIAL
The invention relates to a material including a substrate (30) coated on one face (29) with a stack of thin films (14) comprising at least one metal functional layer (140) and further comprising: - an oxide underlayer based on zinc, ZnO (129), between 0.3 and 4.4 nm; - a mixed oxide dielectric under...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
25.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a material including a substrate (30) coated on one face (29) with a stack of thin films (14) comprising at least one metal functional layer (140) and further comprising: - an oxide underlayer based on zinc, ZnO (129), between 0.3 and 4.4 nm; - a mixed oxide dielectric underlayer based on zinc and tin, SniZnjO (128), between 3.0 and 50.0 nm; - a nitride dielectric underlayer based on silicon-zirconium, SixNyZrZ (127), under and in contact with said zinc-based oxide underlayer, ZnO (129), between 5.0 and 50.0 nm; and - a nitride dielectric underlayer based on silicon, Si3N4 (127) or silicon-zirconium, SixNyZrZ, between 5.0 and 50.0 nm. |
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Bibliography: | Application Number: EP20210851972 |