MEMORY, GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR, AND PRODUCING METHOD

• Main Authors: BENISTANT, Francis Lionel, HOU, Zhaozhao, FAN, Luming, LIU, Yanxiang, XU, Jeffrey Junhao
• Format: Patent
• Language: English; French; German
• Published: 18.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This application provides a memory, a gate-all-around field-effect transistor, and a manufacturing method. The memory may include a storage array, at least one source line, at least one word line, and at least one bit line. The storage array includes a plurality of gate-all-around field-effect transistors. The at least one word line is connected to gates of the plurality of gate-all-around field-effect transistors. The at least one source line is connected to sources of the plurality of gate-all-around field-effect transistors. The at least one bit line is connected to drains of the plurality of gate-all-around field-effect transistors. A material of a nanowire of the gate-all-around field-effect transistor is silicon germanium (SiGe). In this application, for a next-generation logic process (for example, a GAA process), a storage array including a gate-all-around field-effect transistor manufactured by using a same process as a logic process is used in a memory, so that the memory can be compatible with the logic process.