METALLIZATION OF SEMICONDUCTOR WAFER
The present invention relates to a method for manufacturing a semiconductor wafer comprising: i) applying a MOD ink composition to a semiconductor wafer, thereby forming a precursor layer; and ii) curing the precursor layer. In an embodiment, the application in step i) is carried out by inkjet print...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
11.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for manufacturing a semiconductor wafer comprising: i) applying a MOD ink composition to a semiconductor wafer, thereby forming a precursor layer; and ii) curing the precursor layer. In an embodiment, the application in step i) is carried out by inkjet printing. The method for inkjet printing MOD ink has low equipment cost and low power consumption; no material waste; on-demand printing and easy selective deposition/design flexibility (no etching required). In addition, the method of the present invention improves the adhesion and electric conductivity of the metallization layer on backside of the wafer. |
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Bibliography: | Application Number: EP20210835152 |