MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME

Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second...

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Bibliographic Details
Main Authors KIM, Kwangseok, KIM, Kiwoong, PARK, Seonggeon, HASE, Naoki
Format Patent
LanguageEnglish
French
German
Published 20.12.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.
Bibliography:Application Number: EP20230189475