CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE INSULATING CAP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

• Main Authors: WALLACE, Charles H, GANESAN, Krishna, MUNASINGHE, Chanaka D, GULER, Leonard P, GHANI, Tahir
• Format: Patent
• Language: English; French; German
• Published: 03.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Contact over active gate (COAG) structures with uniform and conformal gate insulating cap layers, and methods of fabricating contact over active gate (COAG) structures using uniform and conformal gate insulating cap layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is laterally spaced apart from the gate structure. A dielectric spacer is laterally between the gate structure and the epitaxial source or drain structure, the dielectric spacer having an uppermost surface below an uppermost surface of the gate structure. A gate insulating cap layer is on the uppermost surface of the gate structure and along upper portions of sides of the gate structure, the gate insulating cap layer distinct from the dielectric spacer.