FERROELECTRIC MEMORY AND STORAGE DEVICE

This application provides a ferroelectric memory and a storage device, to increase a density and improve a scale-down capability of a memory cell, and further reduce an area of the ferroelectric memory. The ferroelectric memory includes at least one bit cell. A bit cell in the at least one bit cell...

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Main Authors HOU, Zhaozhao, ZHANG, Yu, WU, Ying, JING, Weiliang, TAN, Wanliang, XU, Jeffrey Junhao, FANG, Yichen, BU, Sitong, ZHANG, Heng
Format Patent
LanguageEnglish
French
German
Published 22.11.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:This application provides a ferroelectric memory and a storage device, to increase a density and improve a scale-down capability of a memory cell, and further reduce an area of the ferroelectric memory. The ferroelectric memory includes at least one bit cell. A bit cell in the at least one bit cell includes a plurality of ferroelectric capacitors and a first transistor. The first transistor includes a first gate, a first channel, and a first source and a first drain that are located at two ends of the first channel. One electrode of each of the plurality of ferroelectric capacitors is formed on the first gate.
Bibliography:Application Number: EP20200960276