SIC EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: IKEDA, Junya, KONDO, Sadahiko
• Format: Patent
• Language: English; French; German
• Published: 09.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a SiC epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a si...