SIC EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a SiC epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a si...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
09.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a SiC epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a silicon carbide substrate, the SiC epitaxial substrate has a first main surface made of the epitaxial film and a second main surface opposite to the first main surface. A maximum value of SBIR on the second main surface based on a 10 mm square site satisfies a condition of 0.1 µm or more and 1.5 µm or less. |
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Bibliography: | Application Number: EP20230153486 |