SIC EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a SiC epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a si...

Full description

Saved in:
Bibliographic Details
Main Authors IKEDA, Junya, KONDO, Sadahiko
Format Patent
LanguageEnglish
French
German
Published 09.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a SiC epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a silicon carbide substrate, the SiC epitaxial substrate has a first main surface made of the epitaxial film and a second main surface opposite to the first main surface. A maximum value of SBIR on the second main surface based on a 10 mm square site satisfies a condition of 0.1 µm or more and 1.5 µm or less.
Bibliography:Application Number: EP20230153486