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A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor laye...

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Bibliographic Details
Main Authors JUNG, Moonil, LEE, Kwanghee, SHIN, Keunwook, KIM, Sangwook, KIM, Euntae, YANG, Jeeeun, BYUN, Kyung-Eun
Format Patent
LanguageEnglish
French
German
Published 09.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor layer and the gate electrode, and a graphene layer disposed between the gate electrode and the gate insulating layer and doped with a metal.
Bibliography:Application Number: EP20230153062