SEMICONDUCTOR DEVICE
In a first vertical field-effect transistor (10) in which first source regions (14) and first connectors (18A) each of which electrically connects a first body region (18) and a first source electrode (11) are alternately and periodically disposed in a first direction (Y direction) in which a first...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
14.02.2024
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Subjects | |
Online Access | Get full text |
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Summary: | In a first vertical field-effect transistor (10) in which first source regions (14) and first connectors (18A) each of which electrically connects a first body region (18) and a first source electrode (11) are alternately and periodically disposed in a first direction (Y direction) in which a first trench (17) extends, a ratio of LS [µm] to LB [µm] is at least 1/7 and at most 1/3, where LS denotes a length of one of the first source regions (14) in the first direction, and LB denotes a length of one of the first connectors (18A) in the first direction, and LB ≤ -0.024 × (VGS)2 + 0.633 × VGS - 0.721 is satisfied for a voltage VGS [V] of a specification value of a semiconductor device (1), the voltage VGS being applied to a first gate conductor (15) with reference to an electric potential of the first source electrode (11). |
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Bibliography: | Application Number: EP20210882905 |