FERROELECTRIC MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

A ferroelectric memory device may include a source, a drain, a channel layer between the source and the drain and connected to the source and the drain, a first gate electrode and a second gate electrode located on the channel layer to be spaced apart from each other, and a ferroelectric layer betwe...

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Bibliographic Details
Main Authors HEO, Jinseong, BAE, Hagyoul, NAM, Seunggeol
Format Patent
LanguageEnglish
French
German
Published 24.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A ferroelectric memory device may include a source, a drain, a channel layer between the source and the drain and connected to the source and the drain, a first gate electrode and a second gate electrode located on the channel layer to be spaced apart from each other, and a ferroelectric layer between the channel layer and the first gate electrode and between the channel layer and the second gate electrode. Different voltages may be applied to the first gate electrode and the second gate electrode.
Bibliography:Application Number: EP20220207222