INTEGRATED CIRCUIT INTERCONNECT STRUCTURES INCLUDING COPPER-FREE VIAS

Integrated circuit interconnect structure compatible with single damascene techniques and that includes a non-copper via comprising metal(s) of low resistivity that can be deposited at low temperature in a manner that also ensures good adhesion. Metal(s) suitable for the non-copper via may have BCC...

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Bibliographic Details
Main Authors JAN, Chia-Hong, BASU, Debashish, BAI, Peng, O'BRIEN, Daniel B, AN, Seungdo, JEONG, James Y, LEIB, Jeffrey S, PLEKHANOV, Pavel S
Format Patent
LanguageEnglish
French
German
Published 10.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Integrated circuit interconnect structure compatible with single damascene techniques and that includes a non-copper via comprising metal(s) of low resistivity that can be deposited at low temperature in a manner that also ensures good adhesion. Metal(s) suitable for the non-copper via may have BCC crystallinity that can advantageously template favorable crystallinity within a diffusion barrier of the upper-level interconnect feature, further reducing electrical resistance of an interconnect structure.
Bibliography:Application Number: EP20220200107