INTEGRATED CIRCUIT INTERCONNECT STRUCTURES INCLUDING COPPER-FREE VIAS
Integrated circuit interconnect structure compatible with single damascene techniques and that includes a non-copper via comprising metal(s) of low resistivity that can be deposited at low temperature in a manner that also ensures good adhesion. Metal(s) suitable for the non-copper via may have BCC...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English French German |
Published |
10.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Integrated circuit interconnect structure compatible with single damascene techniques and that includes a non-copper via comprising metal(s) of low resistivity that can be deposited at low temperature in a manner that also ensures good adhesion. Metal(s) suitable for the non-copper via may have BCC crystallinity that can advantageously template favorable crystallinity within a diffusion barrier of the upper-level interconnect feature, further reducing electrical resistance of an interconnect structure. |
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Bibliography: | Application Number: EP20220200107 |