NANOSHEET TRANSISTORS HAVING A SINGLE-SIDED GATE

• Main Authors: GUHA, Biswajeet, GULER, Leonard, MA, Sean, CEA, Stephen, GHANI, Tahir
• Format: Patent
• Language: English; French; German
• Published: 29.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

Single-sided nanosheet transistor / Forksheet structures comprising an upper channel material (306C) over a lower channel material (306B). A first dielectric material (625) is formed adjacent to a first sidewall of the upper and lower channel materials. A second dielectric material (opposite 625) is formed adjacent, but not directly adjacent, to a second sidewall of the upper and lower channel materials. The first sidewall of the upper and lower channel materials is exposed by etching at least a portion of the first dielectric material. A sidewall portion of the second dielectric material may be exposed by removing sacrificial material from between the upper and lower channel materials. A single-sided gate stack (910) may then be formed in direct contact with the first sidewall of the upper and lower channel materials, and in contact with the sidewall portion of the second dielectric material. A further dielectric (425) may be present between the bases of adjacent fins..