SILICON CARBIDE INGOT MANUFACTURING METHOD, SILICON CARBIDE INGOTS, AND GROWTH SYSTEM THEREFOR

In a method for manufacturing a silicon carbide ingot, a silicon carbide ingot, a system for manufacturing a silicon carbide into according to embodiments of the present invention, a crucible assembly comprising a crucible body having an inner space and a crucible cover covering the crucible body, a...

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Bibliographic Details
Main Authors KU, Kapryeol, KIM, Junggyu, CHOI, Jungwoo, PARK, Jonghwi, KYUN, Myungok
Format Patent
LanguageEnglish
French
German
Published 27.12.2023
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:In a method for manufacturing a silicon carbide ingot, a silicon carbide ingot, a system for manufacturing a silicon carbide into according to embodiments of the present invention, a crucible assembly comprising a crucible body having an inner space and a crucible cover covering the crucible body, a silicon carbide ingot is grown after disposing a raw material and a silicon carbide seed, wherein a weight of the crucible assembly is set to have a weight ratio of 1.5 to 2.7 when a weight of the raw material is regarded as 1. Thus, a silicon carbide ingot has a large area and reduced defects can be manufactured.
Bibliography:Application Number: EP20200938587